© All rights reserved. Powered by Florisera.

RSS Daily tech news
Fig 18. Several steps more can be done to complete several metal layers for interconnects. The last step in the process is the deposition of the final passivation layer, usually Si3N4 (silicon nitride), deposited by PECVD.

CMOS Process Steps: 3um to 1.25um

CMOS chips are made using a twin-well process, with precise tailoring of each well starting from a lightly doped substrate. Key production steps include using advanced masks, growing silicon oxide and nitride layers, ion implantation for wells, and using the LOCOS technique to isolate chip regions efficiently.
Categories
Instagram
Visual Portfolio, Posts & Image Gallery for WordPress